In recent years, Wide Bandgap (WBG) semiconductor based power devices has matured rapidly and are playing a significant role in high switching frequency power electronic applications. WBG materials such as silicon carbide (SiC) and gallium nitride (GaN) possess a higher critical breakdown strength, an increased thermal conductivity, and a wider energy bandgap than silicon which make WBG semiconductors as a material of choice in low on-resistance, high blocking voltage, high switching frequency and high operating temperature power applications. In addition, using these devices result in the overall size reduction of the devices as higher doping levels can be achieved at similar voltage levels.
A gate driver acts as an interface between power devices and logic-level control signals and plays a significant role in the switching behavior of WBG devices. To increase the overall efficiency and reduce the footprint of the system high switching frequency operation of the devices is desirable. However, power consumption in the gate driving circuit increases with frequency. A viable strategy to reduce the gate driving power consumption is to use resonant gate driving technique where part of the energy stored in the gate capacitance is recycled.
In this dissertation, a novel resonant gate driver (RGD) for WBG devices is proposed which drives the semiconductor device using quasi-square wave by utilizing higher order harmonics. Firstly, the operating principles of the proposed gate driver circuit is presented. Secondly, a detailed characteristic analysis and power loss analysis of the circuit are provided. Additionally, a comprehensive simulation study of the proposed circuit is introduced. Moreover, a prototype of the proposed RGD was built and tested. Experimental results demonstrate that the proposed gate driving technique can significantly reduce power consumption in the gate driver circuit in comparison to conventional gate driving techniques.